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| MMBTSC3199 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE Ptot Tj TS Value 50 50 5 150 -150 200 125 -55 to +125 Unit V V V mA mA mW O C C O SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSC3199 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=2mA Current Gain Group O Y G L Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=50V Emitter Cutoff Current at VEB=5V Transition Frequency at VCE=10V, IC=1mA Collector Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1mA, f=1KHz, RG=10K NF 1 10 dB COB 2 3.5 pF fT 80 MHz IEBO 0.1 A ICBO 0.1 A VCE(sat) 0.25 V hFE hFE hFE hFE 70 120 200 350 140 240 400 700 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 |
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